Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1991-12-31
1994-08-09
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257371, 257372, 257500, H01L 29784, H01L 2702
Patent
active
053369157
ABSTRACT:
First and second well regions of a second conductivity type are formed in a semiconductor substrate of a first conductivity type. An analog circuit is formed in the first well region. A digital circuit is formed in the second well region.
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patent: 5023688 (1989-12-01), Ando et al.
patent: 5047358 (1991-09-01), Kosiak et al.
patent: 5239197 (1993-08-01), Yamamoto
Meyer et al., "Integrable High Voltage CMOS: Devices, Process Application", IEDM 85 (IEEE) 30.3, pp. 732-735 (1985).
Fujita Yasuhiko
Miyata Haruyuki
Hille Rolf
Kabushiki Kaisha Toshiba
Williams Alexander Oscar
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