Semiconductor integrated circuit device having a plurality of in

Details Semiconductor integrated circuit device having a plurality of in Semiconductor integrated circuit device having a plurality of in

1980-03-28

1982-09-07

Larkins, William D.

Static information storage and retrieval

Systems using particular element

Semiconductive

29571, 148188, 357 23, 357 41, 357 59, 357 71, G11C 1140, H01L 2704

Patent

active

043487467

ABSTRACT:
An integrated circuit device includes a first enhancement-type IGFET and a second depletion-type IGFET, each of which includes source and drain regions formed in the upper surface of a semiconductor substrate. Both IGFETs include a gate insulator film formed over their channel regions, the first IGFET having a high melting point metal gate electrode formed over its gate insulator without contacting the substrate surface and the second IGFET having a polycrystalline semiconductor gate electrode which directly contacts the substrate at a source/drain region common to the two IGFETs. Such a structure is used to form part of a semiconductor memory device having word lines of high melting point metal.

REFERENCES:
patent: 3771147 (1973-11-01), Bollet et al.
patent: 3953839 (1976-04-01), Dennison et al.
patent: 4012757 (1977-03-01), Koo
patent: 4227944 (1980-10-01), Brown et al.
Brown et al., IEEE Trans. on Electron Devices, vol. ED 13, No. 10, Oct. 1971, pp. 931-939.

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