Semiconductor integrated circuit device for BI-CMOS configuratio

Details Semiconductor integrated circuit device for BI-CMOS configuratio Semiconductor integrated circuit device for BI-CMOS configuratio

1993-02-25

1994-04-19

Sikes, William L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257371, 257372, 257550, H01L 2976, H01L 2994, H01L 2900

Patent

active

053048300

ABSTRACT:
A semiconductor integrated circuit device is fabricated from a complementary inverter circuit and an emitter coupled logic circuit, and an n-type well assigned to a p-channel type transistor extends beneath a p-type well assigned to an n-channel type transistor for partially overlapping therewith, thereby increasing capacitance across the p-n junction for eliminating noises from power voltages.

REFERENCES:
patent: 5122855 (1992-06-01), Shirai
patent: 5198880 (1993-03-01), Taguchi et al.

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