Semiconductor integrated circuit device and semiconductor...

Static information storage and retrieval – Read/write circuit – Having fuse element

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S233100

Reexamination Certificate

active

07050349

ABSTRACT:
A programming circuit includes an LT fuse read circuit programming a defective address during a wafer-processing, an electrical fuse circuit electrically programming a defective address, an electrical fuse circuit storing therein whether the electrical fuse circuit is used, a select circuit receiving data programmed by the LT fuse and that programmed by the electrical fuse for switch and output, an electrical fuse circuit designating a switching of the select circuit, and a repair decision circuit comparing an output received from the select circuit and an input address received from the address buffer.

REFERENCES:
patent: 6166981 (2000-12-01), Kirihata et al.
patent: 6191982 (2001-02-01), Morgan
patent: 6426911 (2002-07-01), Lehmann et al.
patent: 2001/0046170 (2001-11-01), Sher et al.
patent: 2 349 249 (2000-10-01), None
patent: 2000-207896 (2000-07-01), None
S. Fujii, et al “A Low-Power Sub 100 NS 256K Bit Dynamic RAM” IEEE Journal of Solid-State Circuits, vol. SC-18, No. 5, Oct. 1983, pp. 441-446.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor integrated circuit device and semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor integrated circuit device and semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor integrated circuit device and semiconductor... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3541401

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.