Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-02-02
1996-04-16
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257 69, 257 71, 257297, 257300, 257903, H01L 27108, H01L 2904, H01L 2976, H01L 2711
Patent
active
055085407
ABSTRACT:
A SRAM having its memory cell constructed to include transfer MISFETs to be controlled by word lines and a flip-flop circuit having driver MISFETs and load MISFETs. Plate electrodes of large area fixed on predetermined power source lines are arranged over the load MISFETs such that the plate electrodes over the offset region of the load MISFETs are formed with an opening. A silicon nitride film having a thickness permeable to hydrogen but not to humidity is formed over the transfer MISFETs and the driver MISFETs formed over the main surface of a semiconductor substrate and the load MISFETs formed of a polycrystalline silicon film deposited on the driver MISFETs.
REFERENCES:
patent: 5194749 (1993-03-01), Meguro et al.
patent: 5239196 (1993-08-01), Ikeda et al.
patent: 5326989 (1994-07-01), Muragishi
Shouji Ikeda, et al--A Polysilicon Transistor Technology for Large Capacity SRAMs (1990 IEEE).
Fukuda Kazushi
Hashiba Soichiro
Hashimoto Chiemi
Hashimoto Takashi
Ikeda Shuji
Hitachi , Ltd.
Loke Steven H.
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