Semiconductor integrated circuit device and process of manufactu

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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257 69, 257 71, 257297, 257300, 257903, H01L 27108, H01L 2904, H01L 2976, H01L 2711

Patent

active

055085407

ABSTRACT:
A SRAM having its memory cell constructed to include transfer MISFETs to be controlled by word lines and a flip-flop circuit having driver MISFETs and load MISFETs. Plate electrodes of large area fixed on predetermined power source lines are arranged over the load MISFETs such that the plate electrodes over the offset region of the load MISFETs are formed with an opening. A silicon nitride film having a thickness permeable to hydrogen but not to humidity is formed over the transfer MISFETs and the driver MISFETs formed over the main surface of a semiconductor substrate and the load MISFETs formed of a polycrystalline silicon film deposited on the driver MISFETs.

REFERENCES:
patent: 5194749 (1993-03-01), Meguro et al.
patent: 5239196 (1993-08-01), Ikeda et al.
patent: 5326989 (1994-07-01), Muragishi
Shouji Ikeda, et al--A Polysilicon Transistor Technology for Large Capacity SRAMs (1990 IEEE).

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