Semiconductor integrated circuit device and process for manufact

Details Semiconductor integrated circuit device and process for manufact Semiconductor integrated circuit device and process for manufact

1997-05-30

1999-11-09

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438598, 438605, 438610, 438618, 438629, 438630, 438657, 438647, 438241, H01L 2144

Patent

active

059813695

ABSTRACT:
In a process for manufacturing a semiconductor integrated circuit device having a MISFET, in order that a shallow junction between the source/drain of the MISFET and a semiconductor substrate may be realized by reducing the number of heat treatment steps, all conductive films to be deposited on the semiconductor substrate are deposited at a temperature of 500.degree. C. or lower at a step after the MISFET has been formed. Moreover, all insulating films to be deposited over the semiconductor substrate are deposited at a temperature of 500.degree. C. or lower at a step after the MISFET has been formed.

REFERENCES:
patent: 4954214 (1990-09-01), Ho
patent: 5116780 (1992-05-01), Samata et al.
patent: 5378652 (1995-01-01), Samata et al.
patent: 5587338 (1996-12-01), Tseng
patent: 5717250 (1998-02-01), Schuele et al.
patent: 5854127 (1997-03-01), Pan

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