Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-12-05
2006-12-05
Smith, Matthew (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S298000, C257SE27087, C257SE27088, C438S243000
Reexamination Certificate
active
07145193
ABSTRACT:
In a peripheral circuit region of a DRAM, two connection holes, for connecting a first layer line and a second layer line electrically are opened separately in two processes. After forming the connection holes, plugs are formed in the respective connection holes.
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Asano Isamu
Kawakita Keizou
Nakamura Yoshitaka
Yamada Satoru
Antonelli, Terry Stout and Kraus, LLP.
Hitachi , Ltd.
Nguyen Khiem
Smith Matthew
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