Semiconductor integrated circuit device and method of testing th

Static information storage and retrieval – Systems using particular element – Semiconductive

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365185, 365201, G11C 2900, G11C 1600, G11C 1604

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active

051557010

ABSTRACT:
An EPROM and a method of testing the former, in which a defective memory cell caused by defects in the insulating films between a substrate and a floating gate and between the floating gate and a control gate can be tested without writing any data in the individual memory cells by holding data lines to a low potential and word lines fed with a voltage.

REFERENCES:
patent: 4543647 (1985-09-01), Yoshida
patent: 4553225 (1985-11-01), Ohe
patent: 4612630 (1986-09-01), Rosier
patent: 4631724 (1986-12-01), Shimizu
patent: 4718042 (1988-01-01), Moll et al.
patent: 4956816 (1990-09-01), Atsumi et al.
Hitachi IC Memory Data Book, p. 263, May 1984.

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