Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Wire contact – lead – or bond
Reexamination Certificate
2008-08-28
2011-11-22
Menz, Douglas (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Wire contact, lead, or bond
C257S738000, C438S617000
Reexamination Certificate
active
08063496
ABSTRACT:
A semiconductor integrated circuit device includes a semiconductor substrate including a main chip region and a pad region, a multi-layer pad structure on the pad region of the semiconductor substrate, a redistribution pad through the semiconductor substrate and in contact with a bottom surface of the multi-layer pad structure, the redistribution pad being electrically connected to the multi-layer pad structure, a trench belt through the semiconductor substrate and surrounding the redistribution pad, the trench belt electrically isolating the redistribution pad and a portion of the semiconductor substrate adjacent to the redistribution pad, and a connection terminal on the redistribution pad, the connection terminal electrically connecting the redistribution pad to an external source.
REFERENCES:
patent: 5406025 (1995-04-01), Carlstedt
patent: 7122457 (2006-10-01), Tonida et al.
patent: 7294900 (2007-11-01), Asano
patent: 2004-342690 (2004-12-01), None
patent: 2003-332417 (2007-11-01), None
patent: 10-2006-0054690 (2006-05-01), None
Cheon Keon-Yong
Choi Jong-Won
Oh Su-Young
Oh Tae-Seok
Lee & Morse P.C.
Menz Douglas
Samsung Electronics Co,. Ltd.
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