Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-08-23
2005-08-23
Blum, David S. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S403000
Reexamination Certificate
active
06933564
ABSTRACT:
An impurity ion of a polarity opposite to that of an impurity ion forming an n-type diffusion layer is implanted into a lower portion of the n-type diffusion region in a region, in which n-channel type MISFET is to be formed, vertically with respect to a main surface of a semiconductor to form a first p-type pocket layer. Subsequently, an impurity of a p conduction type is implanted into a region between the n-type diffusion region and the first p-type pocket layer obliquely relative to the main surface of the semiconductor substrate to form a second p-type pocket layer. In this arrangement, the concentration of the impurity ion forming the second p-type pocket layer is made higher than the concentration of the impurity ion used to form the first p-type pocket layer.
REFERENCES:
patent: 4701349 (1987-10-01), Koyanagi et al.
patent: 5578509 (1996-11-01), Fujita
patent: 6541829 (2003-04-01), Nishinohara et al.
patent: 6552398 (2003-04-01), Hsu et al.
patent: 6586294 (2003-07-01), Post et al.
patent: 62-133712 (1987-06-01), None
patent: 2000-196079 (2000-07-01), None
Ichinose Katsuhiko
Mitani Shinichiro
Saito Tomohiro
Yanagida Youhei
Blum David S.
Miles & Stockbridge P.C.
Renesas Technology Corp.
LandOfFree
Semiconductor integrated circuit device and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor integrated circuit device and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor integrated circuit device and method of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3447722