Semiconductor integrated circuit device and method of...

Details Semiconductor integrated circuit device and method of... Semiconductor integrated circuit device and method of...

2005-03-08

2005-03-08

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S391000, C257S401000, C257S300000, C257S371000

Reexamination Certificate

active

06864549

ABSTRACT:
A capacitive element C1having a small leakage current is formed by utilizing a gate oxide film9B thicker than that of a MISFET of a logic section incorporated in a CMOS gate array, without increasing the number of steps of manufacturing the CMOS gate array. The capacitive element C1has a gate electrode10E. A part of the gate electrode10E is made of a polycrystalline silicon film. The polycrystalline silicon film is doped with n-type impurities, so that the capacitive element may reliably operate even at a low power supply voltage.

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