Semiconductor integrated circuit device and method for manufactu

Details Semiconductor integrated circuit device and method for manufactu Semiconductor integrated circuit device and method for manufactu

1997-01-13

2000-11-21

Picard, Leo P.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257412, 257413, 257915, 257311, H01L 27108, H01L 2941

Patent

active

061506893

ABSTRACT:
The sheet resistance of a gate electrode 8A (a word line) of memory cell selection MISFET Q of a DRAM and a sheet resistance of bit lines BL.sub.1, BL.sub.2 are, respectively, 2 .OMEGA./.quadrature. or below. Interconnections of a peripheral circuit are formed during the step of forming the gate electrode 8A (the word line WL) or the bit lines BL.sub.1, BL.sub.2 by which the number of the steps of manufacturing the DRAM can be reduced.

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Patent Abstracts of Japan, vol. 95, No. 7, Aug. 31, 1995, JP-7-106437A (Hitachi, Ltd.), Apr. 21, 1995.

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