Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-08-07
2007-08-07
Purvis, Sue A. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S301000, C438S238000, C438S243000
Reexamination Certificate
active
10817004
ABSTRACT:
In a dual polymetal gate electrode, the contact resistance at the interface of silicon films increases due to mutual-diffusion of impurities of p-type and n-type silicon films through a refractory metal and metal nitride deposited thereon. A way of inhibiting the phenomenon is carbon implantation into a refractory metal and refractory metal nitride on the boundary of p-type silicon and n-type silicon, cutting the path, or isolating it by an insulator. Thereby, mutual-diffusion of impurities through a refractory metallic film and nitride film of refractory metal is inhibited, resulting in an increase in the contact resistance of metal nitride film and silicon film and a decrease in the deviation of threshold voltage of the MISFET.
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Kogayu Hiroshige
Tadaki Yoshitaka
Yamamoto Naoki
A. Marquez, Esq. Juan Carlos
Fisher Esq. Stanley P.
Hitachi , Ltd.
Purvis Sue A.
Reed Smith LLP
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