Semiconductor integrated circuit device and manufacturing...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S301000, C438S238000, C438S243000

Reexamination Certificate

active

10817004

ABSTRACT:
In a dual polymetal gate electrode, the contact resistance at the interface of silicon films increases due to mutual-diffusion of impurities of p-type and n-type silicon films through a refractory metal and metal nitride deposited thereon. A way of inhibiting the phenomenon is carbon implantation into a refractory metal and refractory metal nitride on the boundary of p-type silicon and n-type silicon, cutting the path, or isolating it by an insulator. Thereby, mutual-diffusion of impurities through a refractory metallic film and nitride film of refractory metal is inhibited, resulting in an increase in the contact resistance of metal nitride film and silicon film and a decrease in the deviation of threshold voltage of the MISFET.

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