Semiconductor integrated circuit device and magnetic memory...

Static information storage and retrieval – Systems using particular element – Magnetoresistive

Reexamination Certificate

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C365S173000, C365S171000, C365S157000

Reexamination Certificate

active

11062496

ABSTRACT:
Magnetic memory devices integrated together with a logic circuit on a common semiconductor chip are arranged to have layouts mirror-symmetrical (mirror inversion) with respect to an axis parallel to a magnetization-hard axis of a magneto-resistance element of a magnetic memory cell in the magnetic memory device. The logic circuit is arranged between the magnetic memory devices. The magnetic memory device capable accurately of maintaining integrity in logical level between write data and read data is achieved.

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