Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2007-09-18
2007-09-18
Le, Thong Q. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S173000, C365S171000, C365S157000
Reexamination Certificate
active
11062496
ABSTRACT:
Magnetic memory devices integrated together with a logic circuit on a common semiconductor chip are arranged to have layouts mirror-symmetrical (mirror inversion) with respect to an axis parallel to a magnetization-hard axis of a magneto-resistance element of a magnetic memory cell in the magnetic memory device. The logic circuit is arranged between the magnetic memory devices. The magnetic memory device capable accurately of maintaining integrity in logical level between write data and read data is achieved.
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Buchanan & Ingersoll & Rooney PC
Le Thong Q.
Renesas Technology Corp.
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