Semiconductor integrated circuit device and low breakdown voltag

Details Semiconductor integrated circuit device and low breakdown voltag Semiconductor integrated circuit device and low breakdown voltag

1997-12-09

1999-08-10

Chaundhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257378, 257328, 257530, 438328, H01L 2976

Patent

active

059362880

ABSTRACT:
Anode and cathode regions at a principal surface of a semiconductor substrate have the same characteristics as source and drain regions of a P type MOS transistor. A cathode region is superposed partially on the anode region at the principal surface of the semiconductor substrate, the cathode region having the same characteristics as source and drain regions of an N type MOS transistor. The cathode and anode regions form a Zener diode. The Zener diode may be short-circuited by a large current flow, i.e., zapping, or used as a voltage regulator.

REFERENCES:
patent: 4451839 (1984-05-01), Nelson
patent: 4758537 (1988-07-01), Jennings
patent: 5648281 (1997-07-01), Williams et al.
patent: 5691554 (1997-11-01), Matthews

Affiliated with

Also associated with

Rating

Semiconductor integrated circuit device and low breakdown voltag does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor integrated circuit device and low breakdown voltag, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor integrated circuit device and low breakdown voltag will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1122508