Semiconductor integrated circuit device and fabrication method t

Details Semiconductor integrated circuit device and fabrication method t Semiconductor integrated circuit device and fabrication method t

1997-04-28

1997-12-23

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257380, 257311, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

057010250

ABSTRACT:
A semiconductor integrated circuit device includes a capacitor and a resistor in addition to a transistor. The capacitor includes a lower electrode made of a first polysilicon layer formed on an insulating layer covering the main surface of a semiconductor substrate, a dielectric film formed on the lower electrode and a upper electrode formed on the dielectric layer, whereas the resistor includes a resistor layer made of a second polysilicon layer formed on the insulating film. The first polysilicon layer has the same sheet resistance as the second polysilicon layer.

REFERENCES:
patent: 4737838 (1988-04-01), Watanabe
patent: 4929989 (1990-05-01), Hayano
patent: 4949154 (1990-08-01), Haken
patent: 5256826 (1993-10-01), Natsume
patent: 5391906 (1995-02-01), Natsume
Sze Semiconductor Devices--Physics & Tech. pp. 376, 377, 471, .COPYRGT.1985 .

Affiliated with

Also associated with

Rating

Semiconductor integrated circuit device and fabrication method t does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor integrated circuit device and fabrication method t, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor integrated circuit device and fabrication method t will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1804180