Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-11-28
2009-06-09
Menz, Douglas M (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S314000, C438S257000
Reexamination Certificate
active
07544988
ABSTRACT:
The memory cell transistor includes, in a first well region, a pair of memory electrodes, one of which serves as source electrode and the other serves as drain electrode and a channel region interposed between the pair of memory electrodes. There is, on a channel region, a first gate electrode disposed near its corresponding memory electrode with an insulating film interposed therebetween, and a second gate electrode disposed through insulating films and a charge storage region and electrically isolated from the first gate electrode. A first negative voltage is applied to the first well region to form a state of reverse bias greater than or equal to a junction withstand voltage between the second gate electrode and the memory electrode near the second gate electrode, thereby enabling injection of hot electrons into the charge storage region and injection of electrons from the well region to the charge storage region.
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Antonelli, Terry Stout & Kraus, LLP.
Menz Douglas M
Renesas Technology Corp.
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