Semiconductor integrated circuit device analyzable by using lase

Details Semiconductor integrated circuit device analyzable by using lase Semiconductor integrated circuit device analyzable by using lase

1993-03-29

1994-07-12

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Test or calibration structure

257431, 257758, 257911, H01L 2702, H01L 2348

Patent

active

053291395

ABSTRACT:
A semiconductor integrated circuit device is subjected to a non-contact and non-destructive analysis using a laser beam after fabrication process, and impurity regions are previously formed in an area assigned to wiring strips regardless of the circuit components, wherein the impurity regions are selectively coupled with the wiring strips for supplying optical beam induced current to a target circuit component so as to analyze the switching action of the target circuit component.

REFERENCES:
patent: 4881029 (1989-11-01), Kawamura
"Logic Failure Analysis of CMOS VLSI Using a Laser Probe", F. J. Henley, IEEE, Proceedings of the International Reliability Physics Symposium, 1990, pp. 69-75.

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