Semiconductor integrated circuit device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S207000, C257S208000, C257S210000, C257S494000, C257SE29008, C257SE29014, C257SE23079

Reexamination Certificate

active

07667254

ABSTRACT:
Wiring is routed to assure insulation between wiring traces in a semiconductor integrated circuit device. The device includes a first wiring trace to which a prescribed voltage is supplied; a second wiring trace that takes on a voltage that exceeds the prescribed voltage; and a third wiring trace that only takes on a voltage less than the prescribed voltage. Alternatively, the device includes a first wiring trace to which a prescribed voltage is supplied; a second wiring trace that takes on a voltage less than the prescribed voltage; and a third wiring trace that takes on a voltage equal to or greater than the prescribed voltage. The wiring traces are routed at a certain wiring space in such a manner that the first wiring trace is interposed between the second and third wiring traces. The first wiring trace for which the potential difference is known to be small beforehand is routed so as to always be adjacent to the second wiring trace. Accordingly, the third wiring trace for which there is the possibility that the potential difference relative to the second wiring trace will become large is never placed directly adjacent the second wiring trace. As a result of such routing, wiring is implemented in such a manner that the insulation between traces can be sufficiently assured.

REFERENCES:
patent: 5539223 (1996-07-01), Sugoh et al.
patent: 6340825 (2002-01-01), Shibata et al.
patent: 2003/0018949 (2003-01-01), Yoshida
patent: 2-51252 (1990-02-01), None
patent: 2003-31664 (2003-01-01), None
Chinese Office Action dated May 9, 2008 with partial English translation.

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