Semiconductor integrated circuit device

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Reexamination Certificate

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C257S773000

Reexamination Certificate

active

07851914

ABSTRACT:
A semiconductor integrated circuit device includes a plurality of contact layers located between two lines running in parallel in a first direction. Each of the contact layers has a structure in which an upper contact and a lower contact are coupled together. The plurality of contact layers are arranged zigzag along the first direction, and coupling portions of the upper contact and the lower contact are displaced from the center of the upper contact in a second direction perpendicular to the first direction.

REFERENCES:
patent: 5899739 (1999-05-01), Ozaki
patent: 7326993 (2008-02-01), Kajimoto et al.
patent: 7675125 (2010-03-01), Park et al.
patent: 2005/0051831 (2005-03-01), Kajimoto et al.
patent: 2006/0270212 (2006-11-01), Jung et al.
patent: 2008/0063988 (2008-03-01), Fukuhara et al.
patent: 2008/0073635 (2008-03-01), Kiyotoshi et al.
patent: 2008/0079091 (2008-04-01), Park et al.
patent: 11-297830 (1999-10-01), None

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