Semiconductor integrated circuit device

Details Semiconductor integrated circuit device Semiconductor integrated circuit device

2005-05-31

2009-02-24

Nguyen, Dao H (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S390000, C257S394000, C257S786000, C257SE29029, C257SE29064, C365S100000, C365S148000, C365S189050

Reexamination Certificate

active

07495296

ABSTRACT:
The present invention relates to a layout of a multi-channel semiconductor integrated circuit and provides a layout of a semiconductor integrated circuit having ternary circuits in order to increase a degree of integration in the semiconductor integrated circuit and stabilize output characteristics. A ternary circuit is formed by arranging a second high-side transistor, a diode, a second level shift circuit on one hand, and a low-side transistor, a first high-side transistor, a first level shift circuit, and a pre-driver on the other, so that each of cells are arranged in a row and an output bonding pad is placed between the second high-side transistor and the low-side transistor, wherein a cell width of the first level shift circuit, second level shift circuit and pre-driver corresponds to a cell width of the low-side transistor.

REFERENCES:
patent: 5682048 (1997-10-01), Shinohara et al.
patent: 6140687 (2000-10-01), Shimomura et al.
patent: 3-195045 (1991-08-01), None

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