Static information storage and retrieval – Systems using particular element – Flip-flop
Reexamination Certificate
2007-07-17
2009-02-03
Mai, Son L (Department: 2827)
Static information storage and retrieval
Systems using particular element
Flip-flop
C365S154000, C365S189090, C365S226000
Reexamination Certificate
active
07486544
ABSTRACT:
The present invention provides a semiconductor integrated circuit device having an SRAM in which leak current is reduced. In an SRAM comprising a plurality of memory cells each constructed by a storage in which input and output terminals of two inverter circuits are cross-connected and a selection MOSFET provided between the storage and complementary bit lines and whose gate is connected to a word line, a substrate bias switching circuit is provided. In normal operation, the substrate bias switching circuit supplies a power source voltage to an N-type well in which a P-channel MOSFET of a memory cell is formed and supplies a ground potential of the circuit to a P-type well in which an N-channel MOSFET is formed. In the standby state, the substrate bias switching circuit supplies a predetermined voltage which is lower than the power source voltage and by which a PN junction between the N-type well and the source of the P-channel MOSFET is not forward biased to the N-type well, and supplies a predetermined voltage which is higher than the ground potential and by which a PN junction between the P-type well and the source of the N-channel MOSFET is not forward biased to the P-type well.
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Mori Ryo
Muraya Tetsuya
Yamada Toshio
A. Marquez, Esq. Juan Carlos
Fisher Esq. Stanley P.
Mai Son L
Reed Smith LLP
Renesas Technology Corp.
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