Semiconductor integrated circuit device

Details Semiconductor integrated circuit device Semiconductor integrated circuit device

2006-12-07

2009-12-15

Tan, Vibol (Department: 2819)

Electronic digital logic circuitry

Function of and, or, nand, nor, or not

Field-effect transistor

C326S119000, C326S121000, C326S122000, C326S031000, C326S034000, C327S534000, C327S535000

Reexamination Certificate

active

07633315

ABSTRACT:
An object of the present invention is to provide a technique of reducing the leakage current of a drive circuit for driving a circuit that must retain a potential (or information) when in its standby state.A semiconductor integrated circuit device of the present invention includes a drive circuit for driving a circuit block. This drive circuit is made up of a double gate transistor with gates having different gate oxide film thicknesses. When the circuit block is in its standby state, the gate of the double gate transistor having a thinner gate oxide film is turned off and that having a thicker gate oxide film is turned on. This arrangement allows a reduction in the leakage currents of both the circuit block and the drive circuit while allowing the drive circuit to deliver or cut off power to the circuit block.

REFERENCES:
patent: 5781062 (1998-07-01), Mashiko et al.
patent: 7282959 (2007-10-01), Sekigawa et al.
“90 nm Low Leakage SoC Design Techniques for Wireless Applications”, 2005 IEEE International Solid-State Circuits Conference (ISSCC), 2005, p. 138-139.

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