Static information storage and retrieval – Read/write circuit – Including level shift or pull-up circuit
Reexamination Certificate
2007-03-13
2008-07-01
Le, Thong Q (Department: 2827)
Static information storage and retrieval
Read/write circuit
Including level shift or pull-up circuit
C365S189090, C365S189040
Reexamination Certificate
active
07394706
ABSTRACT:
A semiconductor integrated circuit device with reduced consumption current is provided. A first step-down circuit stationarily forms internal voltage lower than supply voltage supplied through an external terminal. A second step-down circuit is switched between first mode and second mode according to control signals. In first mode, the internal voltage is formed from the supply voltage supplied through the external terminal and is outputted through a second output terminal. In second mode, operating current for a control system that forms the internal voltage is interrupted and an output high impedance state is established. The first output terminal of the first step-down circuit and the second output terminal of the second step-down circuit are connected in common, and the internal voltage is supplied to internal circuits.
REFERENCES:
patent: 7200054 (2007-04-01), Horiguchi et al.
patent: 2003/0193349 (2003-10-01), Shimizu et al.
patent: 2004/0174148 (2004-09-01), Hiraki et al.
patent: 02-244488 (1990-09-01), None
patent: 2001-211640 (2001-08-01), None
Hiraki Mitsuru
Horiguchi Masashi
Antonelli, Terry Stout & Kraus, LLP.
Le Thong Q
Renesas Technology Corp.
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