Semiconductor integrated circuit device

Details Semiconductor integrated circuit device Semiconductor integrated circuit device

2007-06-05

2007-06-05

Andujap, Leonardo (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S351000, C257S758000, C257S766000, C257SE27046, C257SE27061, C257SE21632

Reexamination Certificate

active

11066033

ABSTRACT:
A semiconductor integrated circuit device has a first MOS transistor and a second MOS transistor. The first MOS transistor has a first source, a first gate electrode, and a first wiring metal connected to the first source and overlapping the first gate electrode. The second MOS transistor has a second source, a second gate electrode, and a second wiring metal connected to the second source. The first wiring metal of the first MOS transistor and the second wiring metal are positioned so that they do not overlap the second gate electrode.

REFERENCES:
patent: 6215187 (2001-04-01), Ooto et al.
patent: 6281088 (2001-08-01), Kim
patent: 6346730 (2002-02-01), Kitakado et al.
patent: 6891195 (2005-05-01), Yamazaki et al.
patent: 7105900 (2006-09-01), Jung et al.

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