Semiconductor integrated circuit device

Details Semiconductor integrated circuit device Semiconductor integrated circuit device

2006-10-17

2006-10-17

Nguyen, Tuan T. (Department: 2824)

Static information storage and retrieval

Read/write circuit

Having fuse element

C365S148000, C365S158000

Reexamination Certificate

active

07123535

ABSTRACT:
In a non-volatile phase change memory, information is recorded by utilizing a change in resistance of a phase change portion. When the phase change portion is allowed to generate Joule's heat and is held at a specific temperature, it goes into a state of a low resistance. When the gate voltage of a memory cell selection transistor QM is controlled to afford a low resistance state, the maximum amount of current applied to the phase change portion is limited by the application of a medium-state voltage to the control gate, thereby avoiding overheating of the phase change portion.

REFERENCES:
patent: 5883827 (1999-03-01), Morgan
patent: 6141241 (2000-10-01), Ovshinsky et al.
patent: 6750469 (2004-06-01), Ichihara et al.
patent: 6873561 (2005-03-01), Ooishi
patent: 2003/0067013 (2003-04-01), Ichihara et al.
patent: 2004/0157427 (2004-08-01), Motoyoshi
patent: 2004/0208038 (2004-10-01), Idehara
patent: 2004/0240255 (2004-12-01), Smith et al.
patent: 2005/0105327 (2005-05-01), Nazarian
patent: 2002-541613 (2000-12-01), None
patent: 2003-100085 (2001-09-01), None
patent: WO 00/62301 (2000-10-01), None

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