Semiconductor integrated circuit device

Details Semiconductor integrated circuit device Semiconductor integrated circuit device

2006-12-05

2006-12-05

Elms, Richard (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S209000, C365S222000, C365S243500

Reexamination Certificate

active

07145796

ABSTRACT:
A semiconductor integrated circuit device includes a magneto-resistive effect element and a plug. The magneto-resistive effect element includes a first magnetic layer whose magnetization direction is fixed and a second magnetic layer whose magnetization direction can be changed. The plug is formed to penetrate through the second magnetic layer in the film thickness direction of the second magnetic layer and used to apply a write magnetic field to the second magnetic layer.

REFERENCES:
patent: 6351410 (2002-02-01), Nakao et al.
patent: 6654278 (2003-11-01), Engel et al.
patent: 6750068 (2004-06-01), Chen
patent: 6865109 (2005-03-01), Covington
patent: 6920064 (2005-07-01), Zhu et al.
patent: 6956765 (2005-10-01), Saito et al.
Roy Scheuerlein, et al., “A 10NS Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in Each Cell”, 2000 IEEE International Solid-State Circuits Conference, Feb. 7,8 and 9, 2000, pp. 128-129.

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