Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2006-08-22
2006-08-22
Phung, Anh (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S200000, C365S171000, C365S225500, C365S189080
Reexamination Certificate
active
07095649
ABSTRACT:
A semiconductor integrated circuit device includes a main memory cell array, redundant memory cell array, write current source, a common node connected to the write current source, a first selector connected between the common node and one-side ends of main write wirings and a second selector connected between the common node and one-side ends of redundant write wirings. The redundant memory cell array is arranged in a position apart from the main memory cell array and the write current source is commonly used by the main memory cell array and redundant memory cell array via the common node.
REFERENCES:
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patent: 6865103 (2005-03-01), Hidaka
patent: 6882565 (2005-04-01), Tsuchida
patent: 6885579 (2005-04-01), Sakimura et al.
patent: 2004/0037112 (2004-02-01), Ooishi
patent: 2005-71484 (2005-03-01), None
A. Bette, et al. “A High-Speed 128Kbit MRAM Core for Future Universal Memory Applications”, 2003 Symposium on VLSI Circuits Digest of Technical Papers, 2003, 4 Pages.
Shimizu Yuui
Tsuchida Kenji
Kabushiki Kaisha Toshiba
Le Toan
Phung Anh
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