Semiconductor integrated circuit device

Details Semiconductor integrated circuit device Semiconductor integrated circuit device

2006-10-31

2006-10-31

Parker, Kenneth (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

27, 27

Reexamination Certificate

active

07129549

ABSTRACT:
A semiconductor integrated circuit device realizing high integration and a simplified manufacturing process. The circuit includes a gate insulator with a first film thickness, a first N-channel MOSFET and a first P-channel MOSFET, in which a polysilicon layer consists of a gate electrode including an N-type impurity dose, and a gate insulator with a second film thickness thinner than the first film thickness. The circuit also includes a second N-channel MOSFET and a second P-channel MOSFET in which the polysilicon layers are doped with N-type impurity and P-type impurity, respectively. Gate electrodes of said first N-channel MOSFET and first P-channel MOSFET are formed as one body and connected to each other.

REFERENCES:
patent: 5633523 (1997-05-01), Kato
patent: 6198140 (2001-03-01), Muramoto et al.
patent: 6380764 (2002-04-01), Katoh et al.
patent: 6433398 (2002-08-01), Suzuki et al.
patent: 6900492 (2005-05-01), Takaura et al.
patent: 11-195976 (1999-07-01), None

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