Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-05-16
2006-05-16
Thomas, Tom (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S377000, C257S382000, C257S384000, C257S393000, C257S903000, C257S904000, C438S630000, C438S682000
Reexamination Certificate
active
07045864
ABSTRACT:
A semiconductor integrated circuit device, e.g., a memory cell of an SRAM, is formed of a pair of inverters having their input and output points connected in a crisscross manner and being formed of drive n-channel MISFETs and load p-channel MISFETs. The n-channel MISFETs and p-channel MISFETs have their back gates supplied with power supply voltage and a ground voltage, respectively. The MISFETs are formed with a metal silicide layer on the gate electrodes G and source regions (hatched areas) and without the formation of a metal silicide layer on the drain regions, respectively, whereby the leakage current of the MISFETs due to a voltage difference between the drain regions and wells can be reduced, and, thus, the power consumption can be reduced.
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Funayama Kota
Nakamichi Masaru
Nishida Akio
Yoshida Yasuko
Antonelli, Terry Stout and Kraus, LLP.
Díaz José R.
Hitachi ULSI Systems Co. Ltd.
Renesas Technology Corp.
Thomas Tom
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