Semiconductor integrated circuit device

Details Semiconductor integrated circuit device Semiconductor integrated circuit device

2006-05-16

2006-05-16

Mai, Son (Department: 2827)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S189090, C365S211000, C365S212000

Reexamination Certificate

active

07046541

ABSTRACT:
There is disclosed a semiconductor integrated circuit device comprising a memory cell array including a memory cell having a ferroelectric capacitor having first and second electrodes. A first bit line is electrically connected to the first electrode. A first potential generation circuit supplies a first potential to the second electrode to apply a voltage which drops at a first rate of change with a rise of temperature to the ferroelectric capacitor. A sense amplifier amplifies a potential difference between the first bit line and a second bit line complementary to the first bit line.

REFERENCES:
patent: 5487029 (1996-01-01), Kuroda
patent: 5550770 (1996-08-01), Kuroda
patent: 6856573 (2005-02-01), Allen et al.
patent: 2004/0090826 (2004-05-01), Ogiwara et al.
M. Takeo, et al., IEEE, IEDM 97, ICMTS, pp. 621-624, “SRBI2TA2O9Thin Film Capacitor Model Including Polarization Reversal Response for Nanosecond Range Circuit Simulation of Ferroelectric Nonvolatile Memory”, 1997.

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