Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2005-11-01
2005-11-01
Phung, Anh (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S189060, C365S225500
Reexamination Certificate
active
06961264
ABSTRACT:
A semiconductor integrated circuit device has a semiconductor substrate comprising a first region extending along the edge and a second region surrounded by the first region. Memory cell arrays are provided in the second region, and comprising a plurality of cells having an MTJ element. Gate transistors are provided in the first region, and have a current path having a first terminal connected with a bit line, which is a signal read path from the cells, and a second terminal opposite to the first terminal. Data buses are connected with the same number of the second terminals. A connection control circuit is provided in the second region, and connects selected two of the data buses to first and second output terminals, respectively. An amplifier circuit is provided in the first region, and amplifies a potential difference in accordance with signals outputted from the first and second output terminals.
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patent: 6205073 (2001-03-01), Naji
patent: 6563743 (2003-05-01), Hanzawa et al.
patent: 6603677 (2003-08-01), Redon et al.
patent: 2004/0004856 (2004-01-01), Sakimura et al.
patent: 2005/0047202 (2005-03-01), Shimizu et al.
patent: 2005/0047205 (2005-03-01), Tsuchida
Kabushiki Kaisha Toshiba
Nguyen Hien
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Phung Anh
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