Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2005-08-30
2005-08-30
Nguyen, Viet Q. (Department: 2818)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S226000, C365S227000, C365S229000
Reexamination Certificate
active
06937498
ABSTRACT:
A semiconductor integrated circuit device includes connected TC unit type ferroelectric memory which includes series connected memory cells each having a cell transistor having a source terminal and a drain terminal and a ferroelectric capacitor inbetween the two terminals, a first power supply circuit which generates a first power supply potential supplied to the gate of the cell transistor when the cell transistor is in a standby state, and a second power supply circuit. The second power supply circuit generates a second power supply potential supplied to the source or drain of the cell transistor and starts operating following the start-up of the first power supply circuit after a power-on.
REFERENCES:
patent: 5574679 (1996-11-01), Ohtsuki et al.
patent: 5943257 (1999-08-01), Jeon et al.
patent: 6091624 (2000-07-01), Kang
patent: 6201731 (2001-03-01), Kamp et al.
patent: 6288961 (2001-09-01), Tanaka et al.
patent: 6335877 (2002-01-01), Kang
patent: 408055484 (1996-02-01), None
patent: 10-255483 (1998-09-01), None
patent: 11-154390 (1999-06-01), None
patent: 02000077982 (2000-03-01), None
Kabushiki Kaisha Toshiba
Nguyen Viet Q.
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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