Static information storage and retrieval – Systems using particular element – Multiaperture cell
Reexamination Certificate
2008-05-27
2008-05-27
Tran, Michael T (Department: 2827)
Static information storage and retrieval
Systems using particular element
Multiaperture cell
C365S145000, C257S202000
Reexamination Certificate
active
07379319
ABSTRACT:
A semiconductor integrated circuit device includes a semiconductor substrate and a plurality of cell transistors provided on a surface of the semiconductor substrate. A local bit line is provided above the cell transistors and electrically connected to one of a source diffusion layer and a drain diffusion layer of each of the cell transistors. Ferroelectric capacitors corresponding in number to the cell transistors, are provided above the local bit line, where each of the ferroelectric capacitors has an upper electrode and a lower electrode electrically connected to the other one of the source diffusion layer and drain diffusion layer of the corresponding one of the cell transistors. A plate line is provided above the upper electrodes and electrically connected to the upper electrodes. A reset transistor and a block selection transistor are provided on the surface of the semiconductor substrate.
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Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Tran Michael T
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