Patent
1990-08-31
1991-10-22
Hille, Rolf
357 54, 357 65, 357 67, H01L 2348, H01L 2946, H01L 2954, H01L 2962
Patent
active
050600508
ABSTRACT:
In a semiconductor integrated circuit device having copper wiring, the copper wiring is covered with impurity diffusion-preventing films each of which is made of a silicon oxide film formed by plasma CVD, a silicon nitride film, an alumina film, or a titanium nitride film, whereby the resistance of the copper wiring can be prevented from increasing.
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Horiuchi Mitsuaki
Tsuneoka Masatoshi
Hille Rolf
Hitachi , Ltd.
Ostrowski David
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