Semiconductor integrated circuit device

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357 54, 357 65, 357 67, H01L 2348, H01L 2946, H01L 2954, H01L 2962

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active

050600508

ABSTRACT:
In a semiconductor integrated circuit device having copper wiring, the copper wiring is covered with impurity diffusion-preventing films each of which is made of a silicon oxide film formed by plasma CVD, a silicon nitride film, an alumina film, or a titanium nitride film, whereby the resistance of the copper wiring can be prevented from increasing.

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