Static information storage and retrieval – Read/write circuit – Including specified plural element logic arrangement
Patent
1994-02-01
1995-01-24
Popek, Joseph A.
Static information storage and retrieval
Read/write circuit
Including specified plural element logic arrangement
36518911, 365233, 365 51, 365177, 326 66, 326 43, 326 45, G11C 700
Patent
active
053847385
ABSTRACT:
A semiconductor integrated circuit device such as a memory device with logic function comprises a plurality of RAM macrocells and gate arrays. The RAM macrocells are constituted by bipolar CMOS RAMs having a total memory capacity of at least 100 kilobits, and the gate arrays contain at least 4000 gates. The logic circuits in the memory device with logic function or the like are constructed by selectively combining CMOS, bipolar CMOS or ECL gate circuits depending on the output load capacity, transmission characteristic requirement, power dissipation and required layout area. The level of signals at various circuits is set to the ECL level or MOS level depending on the local circuit configuration and other factors. The memory device further incorporates sequence control circuits required to be installed downstream of buffer storages of computers.
REFERENCES:
patent: 5014242 (1991-05-01), Akimoto et al.
Ikeda Masato
Kato Masao
Kobayashi Kouji
Kusunoki Mitsugu
Miyamoto Kazuhisa
Hitachi , Ltd.
Hitachi Microcomputer System Ltd.
Popek Joseph A.
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