Static information storage and retrieval – Read/write circuit
Patent
1989-01-05
1989-11-07
Fears, Terrell W.
Static information storage and retrieval
Read/write circuit
365168, 36518905, 3652335, 307530, G11C 1300
Patent
active
048796816
ABSTRACT:
A semiconductor memory device includes an input circuit and an output circuit. To prevent the erroneous operation of the input circuit by the noise which develops at the time of the change of the output signal of the output circuit, the threshold voltage of the input circuit is changed, or an internal signal generated by the internal circuit is fixed to a predetermined level. In an output circuit having a tri-state output function, the threshold voltage of the input circuit is changed when the output is brought into the high impedance state, or the internal signal generated by the input circuit is fixed to a predetermined state. Using these arrangements it is possible to prevent the erroneous operation of the input circuit by the noise occurring when the output is brought into the high impedance state. Furthermore, in an output circuit having a tri-state output function, the threshold voltage of the input circuit is changed when the output signal of the output circuit is brought into the high impedance state, too, when the output signal changes. This makes it possible to prevent an erroneous detection of the level of the input signal which might otherwise be caused by the noise.
REFERENCES:
patent: 4791613 (1988-12-01), Hardee
Endoh Hitoshi
Miwa Hideo
Odaka Masanori
Tsuruoka Kazuhiro
Yamauchi Koudou
Fears Terrell W.
Hitachi , Ltd.
Hitachi VLSI Engineering Corp.
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