Semiconductor integrated circuit device

Details Semiconductor integrated circuit device Semiconductor integrated circuit device

1991-07-29

1993-02-02

Carroll, J.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257401, H01L 2978, H01L 2702, H01L 2710

Patent

active

051842025

ABSTRACT:
A memory array is divided into a plurality of circuit blocks which each include wirings composed of electrically conductive polycrystalline silicon layers and circuit elements that will be operated by signals supplied via the wirings. Each circuit block is served with a signal via an aluminum layer. The signal supplied to the circuit block is transmitted to the circuit elements via an internal wiring. If the aluminum layer is broken, the circuit blocks formed on the remote side beyond the broken portion fail to work properly. Therefore, breakage of the aluminum layer can be easily detected. Further, since signals are supplied to the circuit blocks via an aluminum layer, the memory array operates at increased speeds.

REFERENCES:
patent: Re32993 (1989-12-01), Anami et al.
patent: 4142176 (1979-02-01), Dozier
patent: 4208727 (1980-12-01), Redwine et al.
patent: 4218693 (1980-08-01), Gee et al.
patent: 4223333 (1980-09-01), Masuoka
M. Yoshimoto et al., "A 64kb Full CMOS RAM with Divided Word Line Structure" ISSCC 83 (Feb. 1983) pp. 58-59.

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