Semiconductor integrated circuit containing redundant memory ele

Details Semiconductor integrated circuit containing redundant memory ele Semiconductor integrated circuit containing redundant memory ele

1992-04-03

1994-03-08

LaRoche, Eugene R.

Static information storage and retrieval

Read/write circuit

Bad bit

365203, 3652257, 3072021, 307441, G11C 800, H03K 19003

Patent

active

052933393

ABSTRACT:
A semiconductor integrated circuit contains a plurality of programmable circuits each including a plurality of fuses and a first transistor which has a gate subjected to an address decoded signal, a drain connected to first ends of the fuses, and a source connected to a common precharge node. The address decoded signal results from decoding a first portion of an address signal for access to memory cells. The sources of the first transistors in the respective programmable circuits are connected to the common precharge node. A plurality of second transistors have gates subjected to a second portion of the address signal, sources connected to a first power supply line, and drains connected to second ends of the fuses in each of the programmable circuits respectively. The second portion of the address signal differs from the first portion of the address signal. A third transistor has a gate subjected to a precharge control signal, a source connected to a second power supply line, and a drain connected to the common precharge node.

REFERENCES:
patent: 4573146 (1986-02-01), Graham et al.
patent: 4689494 (1987-08-01), Chen et al.
patent: 4714839 (1987-12-01), Chung
patent: 5058059 (1991-10-01), Matsuo et al.

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