Semiconductor integrated circuit capable of preventing breakdown

Details Semiconductor integrated circuit capable of preventing breakdown Semiconductor integrated circuit capable of preventing breakdown

1997-09-12

2000-09-12

Tokar, Michael

Electronic digital logic circuitry

Function of and, or, nand, nor, or not

Field-effect transistor

326 55, 326 57, H03K 19094

Patent

active

061183059

ABSTRACT:
The present invention provides a semiconductor integrated circuit comprising a plurality of logic circuits, each of which has at least a first field effect transistor with a first gate connected to a high voltage line and at least a second field effect transistor with a second gate connected to a ground line, wherein said first gates of said plurality of logic circuits are commonly connected through a first interconnection structure to a first resistance which is connected to said high voltage line and wherein said second gates of said plurality of logic circuits are also commonly connected through a second interconnection structure to a second resistance which is connected to said ground line. The first and second interconnection structures enable the single first resistance and the single second resistance to prevent the gate breakdown of the gates in the plurality of the logic circuits. The semiconductor integrated circuit needs a small area for placement of only the two resistances or the first and second resistances in order to prevent the breakdown of the gates of all of the plural logic circuits.

REFERENCES:
patent: 3982138 (1976-09-01), Luisi et al.
patent: 4918336 (1990-04-01), Graham et al.
patent: 5099148 (1992-03-01), McClure et al.
patent: 5774000 (1998-06-01), Vercellotti et al.
patent: 5828235 (1998-10-01), Horiguchi et al.

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