Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-07-31
1999-09-28
Everhart, Caridad
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438637, H01L 2144
Patent
active
059603097
ABSTRACT:
A method wires devices formed on a semiconductor integrated circuit. The method includes the steps of finding a wiring path between the devices, determining whether or not a delay in transmitting signals through the wiring path is within a predetermined range, and if the delay is out of the constraint, changing the number, or area, or both of them of through-holes of a given via in the wiring path so that the delay meets in the timing constraints. The integrated circuit thus wired is capable of handling signals that require severe delay specifications.
REFERENCES:
patent: 4638458 (1987-01-01), Itoh
patent: 5119170 (1992-06-01), Iwamatsu
patent: 5631478 (1997-05-01), Okumura
patent: 5883433 (1999-03-01), Oda
Everhart Caridad
Kabushiki Kaisha Toshiba
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