Error detection/correction and fault detection/recovery – Pulse or data error handling – Replacement of memory spare location – portion – or segment
Reexamination Certificate
2006-12-26
2006-12-26
Britt, Cynthia (Department: 2138)
Error detection/correction and fault detection/recovery
Pulse or data error handling
Replacement of memory spare location, portion, or segment
C714S723000, C365S201000
Reexamination Certificate
active
07155643
ABSTRACT:
A semiconductor integrated circuit includes a memory which has redundant lines for repair in both a column direction and a row direction. A test pattern generating section generates a specific test pattern for the memory. A comparing section reads an output from the memory to judge whether or not a fault cell exists in the memory and outputs a signal which shows existence or nonexistence of a faulty cell. The circuit includes a first data storage section, which operates in a first test mode for a test of the memory and a second test mode for a scan test, and a second data storage section which receives an output signal of the comparing section to store a state of presence or absence of a failure corresponding to the existence or nonexistence of the faulty cell. A repair judging section receives an input to the first data storage section and an output of retained contents in the first data storage section and judges that the memory is repairable. When the second data storage section is in a state where the failure exists, the first data storage section holds the data retained in the first data storage section.
REFERENCES:
patent: 5808947 (1998-09-01), McClure
patent: 6421286 (2002-07-01), Ohtani et al.
patent: 2002/0006065 (2002-01-01), Suzuki
patent: 200143698 (2001-02-01), None
patent: 200232998 (2002-01-01), None
Britt Cynthia
Stevens Davis Miller & Mosher LLP
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