Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads
Reexamination Certificate
2006-01-24
2006-01-24
Potter, Roy (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Bump leads
C438S613000
Reexamination Certificate
active
06989597
ABSTRACT:
Prevention of coming off of the layer where the contacts are formed and the isolating film and breakage of the LSI is realized. To do this, a contact array is provided in which a plurality of contacts is formed so as to be aligned in the vertical and the horizontal directions. In the contact array, the contact formation spacing in both of the vertical and the horizontal directions is larger than the contact formation spacing determined by the manufacturing process. Consequently, the number of contacts formed in the contact array can be reduced to not more than the number of contacts that can be formed in the unit area determined by the process, so that prevention of coming off of the layer where the contacts are formed and the isolating film and breakage of the LSI can be realized.
REFERENCES:
patent: 5477933 (1995-12-01), Nguyen
patent: 6100591 (2000-08-01), Ishii
patent: 6313537 (2001-11-01), Lee et al.
patent: 2001 284536 (2001-10-01), None
Fujino Takeya
Kimura Fumihiro
Potter Roy
Stevens Davis Miller & Mosher LLP
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