Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
1999-09-28
2002-12-10
Wojciechowicz, Edward (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S761000, C257S765000, C257S766000
Reexamination Certificate
active
06492692
ABSTRACT:
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor integrated circuit device for driving a liquid crystal of a liquid crystal display panel, for a thermal head used for a printer of a facsimile, for driving a step motor of a quartz clock, and for a nonvolatile memory, and to a manufacturing method therefor.
The present invention relates to an electronic circuit using the above semiconductor integrated circuit, and to a manufacturing method therefor.
The present invention relates to an insulating gate field effect type semiconductor integrated circuit having a high withstand voltage construction, more specifically to a driver integrated circuit for driving a liquid crystal, for driving a thermo-sensitive register, and the like.
The present invention relates to a semiconductor device, more specifically to a semiconductor device having a plurality of driving transistors such as a semiconductor integrated circuit for a thermal head, and having output pads for the driving transistors, respectively.
The present invention relates to a semiconductor circuit device having an external electrically connecting terminal on an electronic circuit.
The present invention relates to a stable operation of a semiconductor integrated circuit device.
The present invention specifically relates to a semiconductor integrated circuit device having bump electrodes on an electronic circuit,
The present invention relates to a semiconductor integrated circuit device having a built-in protecting circuit for protecting internal elements.
The present invention relates to a semiconductor integrated circuit device having bump electrodes.
More specifically, the present invention relates to semiconductor integrated circuit, such as a semiconductor integrated circuit for driving a thermal head, in which the side of a chip is remarkably long as compared with the area of the chip.
The present invention relates to a method of manufacturing a semiconductor integrated circuit, more specifically to a method of manufacturing a semiconductor integrated circuit, such as a semiconductor integrated circuit for driving a thermal head, which is remarkably elongated, and having a long periphery length.
The present invention relates to a semiconductor integrated circuit in which a plurality of transistors are integrated on the same substrate, particularly to a semiconductor integrated circuit in which a pad portion as an external connecting terminal is disposed on a transistor.
The present invention relates to an electronic circuit and a manufacturing method therefor, particularly to an electronic circuit including an integrated circuit which is implemented on a printed circuit board in a face down manner, more specifically to an electronic circuit used for an electronic clock.
The conventional semiconductor device (semiconductor integrated circuit) for a thermal head has a switching function for applying an electric current of about 10 mA through a plurality of resistors of several k&OHgr; arranged in line along a thermal-sensitive paper corresponding to a printing information. The respective thermal-sensitive resistors are electrically connected to an external connecting terminal disposed on a surface of the semiconductor device.
FIG. 2
is a sectional view of an output portion of a general semiconductor device for a thermal head. Thermal-sensitive resistors and semiconductor devices are disposed away from each other in two dimensions on a thermal head substrate. The thermal-sensitive resistors are directly connected to bonded wires
11
. The bonded wire
11
is mechanically and electrically connected to a pad region made of an aluminum interconnection by a bonding process. The pad region is comprised of an aluminum film pattern formed, used for connection to the external circuit, by perforating a final passivation film
10
on an aluminum interconnection
9
. Below the pad region are disposed an intermediate insulating film
8
and a field insulating film
6
which bear mechanical stress at the bonding process. The aluminum interconnection
9
of the pad region is electrically connected to a drain region of a resistor driving insulating gate field effect transistor arranged in two dimensions through a contact region
12
. The drain region, being of a high withstand voltage construction, is comprised of a first drain region
3
B comprising a low density impurity region, and a second drain region
3
A comprising a high density impurity region. A high voltage of about 30 V is added to the thermal-sensitive resistors in order to apply a large electric current of about 10 mA thereto. Accordingly, when the transistor which functions as a switch is turned off, a high voltage of about 30 V is added to the drain region. A plurality of the transistors for switching the respective thermal-sensitive resistors are arranged along a longitudinal direction of the semiconductor by the number of the resistors in a row as shown in FIG.
3
.
An example of the conventional semiconductor device is shown in FIG.
3
.
FIG. 3
is a plane view of a semiconductor integrated circuit for a thermal head. Output pads O
1
, O
2
, . . . , ON and electric source pads P
1
, P
2
and the like are arranged on a periphery of a chip
50
. The circuit on which transistors are integrated is arranged away from an external leading electrode in two dimensions. In other words, driving transistors T
1
, T
2
, . . . , TN are arranged so as to be electrically connected to the corresponding output pads, and further logic circuits L
1
, L
2
, . . . , LN for controlling the respective driving transistors are arranged cycle-periodically along a longitudinal direction of the chip
50
. The external leading electrode is comprised of a perforation
92
disposed on the final protecting film and a bump
93
is disposed on the perforation
92
. The bump in
FIG. 3
may be replaced by a bonding.
FIG. 4
shows a conventional semiconductor integrated circuit device. A plurality of pad electrodes
603
as terminals which are to be connected to the external circuit are disposed on a semiconductor substrate
601
. The pad electrodes
603
are connected to an internal electronic circuit
602
through protecting circuits
604
, respectively. The protecting circuit
604
aims to discharge an eddy-current in order to prevent the breakdown of the internal electronic circuit
602
due to the eddy-current caused by static electricity and noise inputted to the internal electronic circuit
602
from the external circuit. Basically, one protecting circuit
604
is required for one pad electrode
603
. Also, in order to discharge the eddy-current, the protecting circuit
604
is required to be sufficiently away from the internal circuit
602
in such a manner that the discharging electric charge does not reach the internal circuit
602
.
However, the conventional semiconductor device for the thermal head has the problems described below. That is, as shown in
FIG. 2
, the transistors and the bonding pads are required to be disposed away from each other in two dimensions, so that the area of the semiconductor device becomes large, which makes it difficult to lower the manufacturing cost.
Also, the conventional high withstand voltage MOS transistor has a shallow diffusion depth of a low density drain region used for obtaining the high withstand voltage characteristic, which requires the transistor having a large area in order for a large electric current to flow therethrough against the increase of the resistance thereat. Further, when raising the density of the low density drain region for obtaining the high withstand voltage characteristic in order to reduce the resistance thereof, the withstand voltage of the drain region is excessively reduced down to not greater than 10 V. Otherwise, when the diffusion depth is made deeper while remaining the low density, the low density drain region for obtaining the high withstand voltage characteristic excessively becomes large in a lateral direction also, which makes the transistor excessively large.
The conventional semiconductor
Akiba Takao
Inoue Naoto
Ishii Kazutoshi
Kadoi Kiyoaki
Kojima Yoshikazu
Hogan & Hartson LLP
Seiko Instruments Inc.
Wojciechowicz Edward
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