Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1996-07-31
1999-03-30
Whitehead, Jr., Carl
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 57, 257 72, 257349, 257410, H01L 2904, H01L 31036
Patent
active
058892915
ABSTRACT:
In a monolithic active matrix circuit that uses offset-gate TFTs in which the gate electrode is offset from the source and drain regions or TFTs whose gate insulating film is formed by vapor deposition, not only an active matrix circuit but also a drive circuit therefor is formed by using P-channel TFTs.
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Kawasaki Yuji
Koyama Jun
Ferguson Jr. Gerald J.
Jr. Carl Whitehead
Robinson Eric J.
Semiconductor Energy Laboratory Co,. Ltd.
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