Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-07-21
1997-10-21
Monin, Donald
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257360, 257369, H01L 2906, H01L 2978
Patent
active
056799713
ABSTRACT:
In a semiconductor integrated circuit having a plurality of electronic circuits each provided with interfaces used for effecting signal transmission, and supplied with operating voltages from a plurality of independent power supply terminals, protective elements each having high threshold voltages at which the elements are off in the ordinary state of power supply are provided, and a resistor and a diode both for preventing electrostatic breakdown are connected to the gate of an input MOSFET of the interface for carrying out signal transmission between the electronic circuits. Even when a high voltage due to static electricity is applied to each power supply terminal while the semiconductor integrated circuit is handled, electrostatic breakdown of the interface can be prevented by the protective element or the electrostatic breakdown preventive circuit comprising a resistor and a diode.
REFERENCES:
patent: 5426323 (1995-06-01), Reczek et al.
patent: 5514893 (1996-05-01), Miyanaga et al.
Kalter, "Semiconductor Chip Pad Protect Device" IBM TDB vol. 15 No. 12, May 1973, pp. 3753-3754.
Nagatani Akihiro
Okazaki Takao
Tamba Yuko
Hitachi , Ltd.
Hitachi Tohbu Semiconductor, Ltd.
Monin Donald
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