Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2006-04-13
2011-12-20
Phan, Trong (Department: 2827)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S149000
Reexamination Certificate
active
08081499
ABSTRACT:
A field-effect transistor for nonvolatile memory holding use and a field-effect transistor for logical operation use are manufactured in the same structure on the same semiconductor substrate without separately providing manufacturing processes for the field-effect transistors for the two uses. Both a memory circuit and a logic circuit of a semiconductor integrated circuit are composed of n-channel and p-channel field-effect transistors including a memory holding material in a gate insulating structure. A logical operation state, a memory writing state and a nonvolatile memory holding state are electrically switched by controlling the level and application timing of a voltage to be applied between a gate conductor and a substrate region of the n-channel and p-channel field-effect transistors including the memory holding material in the gate insulating structure.
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Sakai Shigeki
Takahashi Mitsue
National Institute of Advanced Industrial Science and Technology
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Phan Trong
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