Static information storage and retrieval – Systems using particular element – Flip-flop
Reexamination Certificate
2006-06-16
2008-11-04
Elms, Richard (Department: 2824)
Static information storage and retrieval
Systems using particular element
Flip-flop
Reexamination Certificate
active
07447059
ABSTRACT:
A semiconductor integrated circuit having an internal SRAM that includes a plurality of arrayed memory cells, including a first bit line and a second bit line that are connected to first ports and a third bit line and a fourth bit line that are connected to second ports of the memory cells, a first and second transistor respectively compose first ports of adjacent first and second memory cells and having shared impurity diffusion region connected to the first bit line via a first interconnection, a third transistor composing a second port of the first memory cell and having an impurity diffusion region connected to the third bit line via a second interconnection a fourth and fifth transistor respectively composing the first ports of the first and second memory ceils and having a shared impurity diffusion region connected to the second bit line via a third interconnection.
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Byrne Harry W
Elms Richard
Harness & Dickey & Pierce P.L.C.
Seiko Epson Corporation
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