Semiconductor integrated circuit

Details Semiconductor integrated circuit Semiconductor integrated circuit

2008-06-03

2008-06-03

Ha, Nathan W (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

Reexamination Certificate

active

07382020

ABSTRACT:
Upstanding thin-film channel regions5having different heights are formed between source regions7and drain regions8of MOS transistors, respectively.

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Bin Yu, et al., “FinFET Scaling To 10nm Gate Length”, IEDM Tech. Dig., 2002, pp. 251-254.
Digh Hisamoto, et al., “FinFET-A Self-Aligned Double-Gate MOSFET Scalable To 20 nm”, IEEE Trans.Electron Devices. vol. 47, No. 12, 2000, pp. 2320-2325.

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