Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-03-29
2011-03-29
Tan, Vibol (Department: 2819)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S349000, C257S369000, C438S275000, C438S294000, C438S396000, C365S145000, C365S154000, C365S190000, C326S014000
Reexamination Certificate
active
07915657
ABSTRACT:
Disclosed herein is a semiconductor integrated circuit including: a memory circuit section used for storing data; and a non-memory circuit section which is provided to serve as a section other than the memory circuit section and used for storing no data, wherein the second-conduction-type impurity concentration of a second-conduction-type semiconductor area including a channel created for a first-conduction-type transistor employed in the non-memory circuit section is lower than the second-conduction-type impurity concentration of a second-conduction-type semiconductor area including a channel created for a first-conduction-type transistor employed in the memory circuit section.
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Mikami Nobukazu
Nakauchi Takuya
Usui Hiroki
Rader & Fishman & Grauer, PLLC
Sony Corporation
Tan Vibol
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