Semiconductor integrated circuit

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S349000, C257S369000, C438S275000, C438S294000, C438S396000, C365S145000, C365S154000, C365S190000, C326S014000

Reexamination Certificate

active

07915657

ABSTRACT:
Disclosed herein is a semiconductor integrated circuit including: a memory circuit section used for storing data; and a non-memory circuit section which is provided to serve as a section other than the memory circuit section and used for storing no data, wherein the second-conduction-type impurity concentration of a second-conduction-type semiconductor area including a channel created for a first-conduction-type transistor employed in the non-memory circuit section is lower than the second-conduction-type impurity concentration of a second-conduction-type semiconductor area including a channel created for a first-conduction-type transistor employed in the memory circuit section.

REFERENCES:
patent: 6583470 (2003-06-01), Maki et al.
patent: 7142004 (2006-11-01), Calrson
patent: 7638849 (2009-12-01), Furuta et al.
patent: 7808056 (2010-10-01), Furuta et al.
patent: 2006/0275995 (2006-12-01), Furuta
patent: 2007/0141794 (2007-06-01), Morris
patent: 2008/0142899 (2008-06-01), Morris et al.
patent: 2007-073709 (2007-03-01), None

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